Semiconductor integrated circuit, electronic device, solid-state imaging apparatus, and imaging apparatus

ABSTRACT

A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part of the analog circuit and the digital circuit are formed; and a substrate connection portion which connects the first and second semiconductor substrates to each other. The substrate connection portion transmits an analog signal which is generated by a part of the analog circuit of the first semiconductor substrate to the second semiconductor substrate.

BACKGROUND

The present disclosure relates to a semiconductor integrated circuit inwhich analog and digital circuits coexist, an electronic device, asolid-state imaging apparatus, and an imaging apparatus.

In recent years, many MOS-type solid-state imaging apparatuses have aplurality of pixel circuits which have a photodiode subjecting light tophotoelectric conversion, and a signal processing circuit which convertsand processes a pixel signal output from each of the pixel circuits intoa digital value.

In a highly-functional or high-speed semiconductor integrated circuitsuch as this solid-state imaging apparatus, when photodiodes of pixels,or analog and digital circuits are disposed in a semiconductorsubstrate, a difference in process requirements for the elements whichare used, respectively, is large.

As a result, in the semiconductor integrated circuit, an increase incost due to an increase in the number of processes and a deteriorationin sensor characteristics due to a difference in optimum processes, andthe like occur.

In a so-called three-dimensional Large Scale Integration (LSI) structurehaving a structure in which a plurality of chips overlap each other, anLSI can be configured by stacking chips manufactured by differentprocesses. As a result, in the three-dimensional LSI structure, theabove-described problems can be solved (Japanese Unexamined PatentApplication Publication No. 2004-146816, International Publication No.2006/129762).

SUMMARY

However, in a semiconductor integrated circuit having a plurality ofchips, a plurality of circuit blocks which are realized in the circuitare formed to be divided into the plurality of chips, and thus the totalarea of the semiconductor substrate increases.

For example, in a digital circuit to which an analog signal is inputfrom an analog circuit formed in another semiconductor substrate, it isnecessary to add an input protection circuit since an input terminal ofthe digital circuit is exposed to the outside by a pad or the like.

In the semiconductor integrated circuit in which the analog and digitalcircuits coexist as described above, when these circuits are formed tobe divided into a plurality of semiconductor substrates, it is necessaryto suppress an increase in the total area of the substrate.

A semiconductor integrated circuit according to a first embodiment ofthe present disclosure includes: a first semiconductor substrate inwhich a part of an analog circuit is formed between the analog circuitand a digital circuit which subjects an analog output signal output fromthe analog circuit to digital conversion; a second semiconductorsubstrate in which the remaining part of the analog circuit and thedigital circuit are formed; and a substrate connection portion whichconnects the first and second semiconductor substrates to each other.The substrate connection portion transmits an analog signal which isgenerated by a part of the analog circuit of the first semiconductorsubstrate to the second semiconductor substrate.

In the first embodiment, the analog circuit is formed to be divided intothe first and second semiconductor substrates.

Accordingly, a remaining part of the analog circuit of the secondsemiconductor substrate functions as an input protection circuit of thedigital circuit of the second semiconductor substrate.

Therefore, the second semiconductor substrate is not provided with aninput protection circuit of the digital circuit.

An electronic device according to a second embodiment of the presentdisclosure includes: a semiconductor integrated circuit in which ananalog circuit and a digital circuit which subjects an analog outputsignal output from the analog circuit to digital conversion coexist. Thesemiconductor integrated circuit has a first semiconductor substrate inwhich a part of the analog circuit is formed, a second semiconductorsubstrate in which the remaining part of the analog circuit and thedigital circuit are formed, and a substrate connection portion whichconnects the first and second semiconductor substrates to each other.The substrate connection portion transmits an analog signal which isgenerated by a part of the analog circuit of the first semiconductorsubstrate to the second semiconductor substrate.

A solid-state imaging apparatus according to a third embodiment of thepresent disclosure includes: a first semiconductor substrate in which apart of an analog circuit including a plurality of photoelectricconversion elements is formed between the analog circuit including theplurality of photoelectric conversion elements and a digital circuitwhich subjects an analog output signal output from the analog circuit todigital conversion; a second semiconductor substrate in which theremaining part of the analog circuit and the digital circuit are formed;and a substrate connection portion which connects the first and secondsemiconductor substrates to each other. The substrate connection portiontransmits an analog signal which is generated by a part of the analogcircuit of the first semiconductor substrate to the second semiconductorsubstrate.

An imaging apparatus according to a fourth embodiment of the presentdisclosure includes: an optical system which collects light; and asolid-state imaging portion which has a plurality of photoelectricconversion elements which subject the light collected by the opticalsystem to photoelectric conversion. The solid-state imaging portion hasa first semiconductor substrate in which a part of an analog circuitincluding a plurality of photoelectric conversion elements is formedbetween the analog circuit including the plurality of photoelectricconversion elements and a digital circuit which subjects an analogoutput signal output from the analog circuit to digital conversion, asecond semiconductor substrate in which the remaining part of the analogcircuit and the digital circuit are formed, and a substrate connectionportion which connects the first and second semiconductor substrates toeach other. The substrate connection portion transmits an analog signalwhich is generated by a part of the analog circuit of the firstsemiconductor substrate to the second semiconductor substrate.

In the present disclosure, when a semiconductor integrated circuit inwhich analog and digital circuits coexist is formed to be divided into aplurality of semiconductor substrates, it is possible to suppress anincrease in the total area of the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a Complementary Metal Oxide Semiconductor(CMOS) sensor-type solid-state imaging apparatus according to a firstembodiment of the present disclosure.

FIG. 2 is a circuit diagram of a pixel array portion for one column ofFIG. 1 and a column circuit.

FIGS. 3A and 3B are explanatory diagrams of the three-dimensionalstructure of the solid-state imaging apparatus of FIG. 1.

FIG. 4 is an explanatory diagram of a method of distributing the pixelarray portion and the column circuit into a sensor chip and a signalprocessing chip of FIGS. 3A and 3B.

FIG. 5 is an explanatory diagram of a method of distributing the pixelarray portion for one column and the column circuit into the sensor chipand the signal processing chip of FIGS. 3A and 3B.

FIGS. 6A and 6B are explanatory diagrams of a current supply of thepixel array portion formed in the signal processing chip of FIGS. 3A and3B.

FIG. 7 is an explanatory diagram of the chip distribution in asolid-state imaging apparatus of a comparative example.

FIG. 8 is an explanatory diagram of the optical structures of the sensorchip and the signal processing chip of FIG. 2.

FIG. 9 is an explanatory diagram of the optical structures of a sensorchip and a signal processing chip in a second embodiment of the presentdisclosure.

FIG. 10 is an explanatory diagram of a method of distributing a pixelarray portion for one column and a column circuit into a sensor chip anda signal processing chip of a third embodiment of the presentdisclosure.

FIG. 11 is an explanatory diagram of the configuration of a ChargeCoupled Device (CCD) sensor-type solid-state imaging apparatus of afourth embodiment of the present disclosure and a chip distributionmethod.

FIG. 12 is an explanatory diagram of an example of the layout at an endpart on the charge transmission side of a vertical transmission portionof FIG. 11.

FIG. 13 is a block diagram of an imaging apparatus according to a fifthembodiment of the present disclosure.

FIGS. 14A and 14B are explanatory diagrams of a DC cutting circuit whichremoves the DC component of an analog signal.

DETAILED DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments of the present disclosure will be describedwith reference to the drawings.

The description will be given in the following order.

1. First Embodiment (Example of Solid-State Imaging Apparatus HavingCMOS Sensor System)

2. Second Embodiment (Modified Example of Optical Structure ofSolid-State Imaging Apparatus)

3. Third Embodiment (Modified Example of Chip Division of Solid-StateImaging Apparatus)

4. Fourth Embodiment (Example of Solid-State Imaging Apparatus HavingCCD Sensor System)

5. Fifth Embodiment (Example of Imaging Apparatus)

1. First Embodiment

[Configuration of Solid-State Imaging Apparatus 1 Having CMOS SensorSystem]

FIG. 1 is a block diagram of a solid-state imaging apparatus 1 having aCMOS sensor system according to a first embodiment of the presentdisclosure.

A solid-state imaging apparatus 1 of FIG. 1 has a timing control circuit11, a row scanning circuit 12, a pixel array portion 13, a columncircuit 14, a column scanning circuit 15, a horizontal scanning outputsignal line 16, an (Auto Gain Control) arithmetic circuit 17, and anoutput circuit 18.

The pixel array portion 13 has a plurality of pixel circuits 19 whichare two-dimensionally arranged in a matrix in one surface of asemiconductor substrate.

The plurality of pixel circuits 19 are connected to a plurality of rowselection signal lines 20 for each row. The plurality of row selectionsignal lines 20 are connected to the row scanning circuit 12.

In addition, the plurality of pixel circuits 19 are connected to aplurality of column output signal lines 21 for each column. Theplurality of column output signal lines 21 are connected to the columncircuit 14.

FIG. 2 is a circuit diagram of the pixel array portion 13 for one columnof FIG. 1 and the column circuit 14.

As shown in FIG. 2, the plurality of pixel circuits 19 which arearranged in a column are connected to a column output signal line 21.

The pixel circuit 19 of FIG. 2 has a photodiode 31, a transmissiontransistor 32, a floating diffusion (FD) 33, an amplification transistor34, a selection transistor 35, and a reset transistor 36.

The transmission transistor 32, the amplification transistor 34, theselection transistor 35, and the reset transistor 36 are, for example,Metal Oxide Semiconductor (MOS) transistors formed in a semiconductorsubstrate.

The photodiode 31 subjects incident light to photoelectric conversioninto a charge (here, electrons) of an amount according to the lightintensity thereof.

In the transmission transistor 32, the drain is connected to thephotodiode 31, the source is connected to the FD 33, and the gate isconnected to a transmission signal line (not shown).

When the transmission transistor 32 is turned on, it transmits a chargegenerated by the photodiode 31 to the floating diffusion 33.

In the reset transistor 36, the drain is connected to a power supplyVdd, the source is connected to the FD 33, and the gate is connected toa reset signal line (not shown).

When the reset transistor 36 is turned on, it resets the FD 33 to theelectric potential of the power supply Vdd.

In the amplification transistor 34, the drain is connected to the powersupply Vdd, the source is connected to the drain of the selectiontransistor 35, and the gate is connected to the FD 33.

In the selection transistor 35, the drain is connected to the source ofthe amplification transistor 34, the source is connected to the columnoutput signal line 21, and the gate is connected to the row selectionsignal line 20.

In addition, the column output signal line 21 is connected to a currentsupply 37.

In this manner, the amplification transistor 34 constitutes a sourcefollower-type amplifier when the selection transistor 35 is turned on.

When the selection transistor 35 is turned on, the amplificationtransistor 34 outputs a pixel signal (analog signal) according to theelectric potential of the FD 33 to the column output signal line 21.

In addition, in the pixel circuit 19 of FIG. 2, the photodiode 31 andthe FD 33 are reset due to, for example, the turning-on of thetransmission transistor 32 and the reset transistor 36. The voltagelevel after the reset of the FD 33 becomes the power supply Vdd.

Thereafter, when the transmission transistor 32 is turned on, the chargegenerated by the photodiode 31 after the reset is transmitted to the FD33. The voltage level of the FD 33 becomes a voltage according to thequantity of the charge.

In addition, when the selection transistor 35 is turned on, theamplification transistor 34 outputs the pixel signal of a levelaccording to the voltage level of the FD 33 input to the gate to thecolumn output signal line 21.

The row scanning circuit 12 of FIG. 1 is connected to the timing controlcircuit 11 and the plurality of row selection signal lines 20.

The row scanning circuit 12 selects the plurality of row selectionsignal lines 20 in sequence on the basis of a vertical synchronizationsignal input from the timing control circuit 11. The row scanningcircuit 12 selects the plurality of row selection signal lines 20 insequence for each horizontal scanning period.

The pixel circuit 19 connected to a selected row selection signal line20 outputs an analog pixel signal of a level according to the quantityof the charge which is generated by the photoelectric conversion of thephotodiode 31 to the column output signal line 21.

As shown in FIG. 2, the column circuit 14 has a plurality of sets of acomparator 41, an up/down counter 42, and a memory 43 on a column tocolumn basis.

In the comparator 41, one of a pair of input terminals is connected tothe column output signal line 21, and the other is connected to a DAconverter (DAC) 44. The DAC 44 outputs a lamp signal, the level of whichis changed in the manner of a lamp, on the basis of a value input fromthe timing control circuit 11.

The comparator 41 compares the level of a lamp signal which is inputfrom the DAC 44 with the level of a pixel signal which is input from thecolumn output signal line 21.

For example, when the level of a pixel signal is lower than the level ofa lamp signal, the comparator 41 outputs a high-level comparison signal.When the level of a pixel signal is higher than the level of a lampsignal, the comparator 41 outputs a low-level comparison signal.

The up/down counter 42 is connected to the comparator 41.

The up/down counter 42 counts, for example, a period during which thelevel of a comparison signal is high or low. Due to this counting, thepixel signal of each pixel circuit 19 is converted into a completedigital value.

An AND circuit may be provided between the comparator 41 and the up/downcounter 42 and the number of pulse signals, which are input to this ANDcircuit, may be counted by the up/down counter 42.

The memory 43 is connected to the up/down counter 42, the horizontalscanning output signal line 16, and the column scanning circuit 15.

The memory 43 stores the count value counted by the up/down counter 42.

In addition, the column circuit 14 may count a count value correspondingto a reset level on the basis of a pixel signal when the pixel circuit19 is reset, may count a count value on the basis of a pixel signalafter a predetermined imaging time, and may store a difference valuetherebetween in the memory 43.

The column scanning circuit 15 of FIG. 1 is connected to the timingcontrol circuit 11 and the plurality of memories 43 of the columncircuit 14.

The column scanning circuit 15 selects the plurality of memories 43 insequence on the basis of a horizontal synchronization signal input fromthe timing control circuit 11. A selected memory 43 outputs a signalincluding a stored count value to the horizontal scanning output signalline 16.

In this manner, for each horizontal synchronization, a plurality ofcount values in which pixel signals of a plurality of pixel circuits 19in one row are digitalized are output to the horizontal scanning outputsignal line 16.

The arithmetic circuit 17 is connected to the horizontal scanning outputsignal line 16.

The arithmetic circuit 17 subjects a signal received from the horizontalscanning output signal line 16 to addition and the like to convert thesignal into a data array adapted to the output specification.

The output circuit 18 is connected to the arithmetic circuit 17.

[Method of Distributing Circuits into Sensor Chip 6 and SignalProcessing Chip 7]

FIGS. 3A and 3B are explanatory diagrams of the three dimensionalstructure of the solid-state imaging apparatus 1 of FIG. 1.

FIG. 3A is a side view of the solid-state imaging apparatus 1 of FIG. 1.FIG. 3B is a front view of the solid-state imaging apparatus 1 of FIG.1.

The solid-state imaging apparatus 1 of FIGS. 3A and 3B has a sensor chip6, a signal processing chip 7, and a sealing resin 8.

The sensor chip 6 has a rectangular first semiconductor substrate 51 anda plurality of micropads 52 which are arranged in the central part ofthe back surface of the first semiconductor substrate 51.

The signal processing chip 7 has a rectangular second semiconductorsubstrate 53 which is larger than the first semiconductor substrate 51,a plurality of pads which are arranged in both of the end parts in thelongitudinal direction of the second semiconductor substrate 53, and aplurality of micropads 54 which are arranged in the central part of theupper surface of the second semiconductor substrate 53.

The first semiconductor substrate 51 of the sensor chip 6 is disposed tooverlap with the central part of the second semiconductor substrate 53of the signal processing chip 7.

In addition, the plurality of micropads 52 arranged in the back surfaceof the first semiconductor substrate 51 and the plurality of micropads54 arranged in the surface of the second semiconductor substrate 53 areelectrically connected to each other by a plurality of microbumps 55.

The first and second semiconductor substrates 51 and 53 are fixed toeach other by the sealing resin 8.

In FIGS. 3A and 3B, the upper surface of the first semiconductorsubstrate 51 is a light sensing surface.

A plurality of circuit blocks of the solid-state imaging apparatus 1 ofFIG. 1 are formed to be distributed into the sensor chip 6 and thesignal processing chip 7 of FIGS. 3A and 3B.

In general, a plurality of circuit blocks are distributed into aplurality of chips for each circuit block.

In the solid-state imaging apparatus 1, since the sensor chip 6 has alight sensing surface, for example, the pixel array portion 13 isconsidered to be formed in the sensor chip 6.

In this case, the remaining digital circuit, that is, the timing controlcircuit 11, the row scanning circuit 12, the column circuit 14, the rowscanning circuit 15, the horizontal scanning output signal line 16, thearithmetic circuit 17, and the output circuit 18 are formed in thesignal processing chip 7.

In this manner, since the analog circuit of the solid-state imagingapparatus 1 is formed in the sensor chip 6 and the remaining digitalcircuit is formed in the signal processing chip 7, the analog anddigital circuits can be formed in separate semiconductor substrates.

Accordingly, the sensor chip 6 can be formed with a semiconductorsubstrate suitable as the analog circuit and a manufacturing processthereof, and the signal processing chip 7 can be formed with asemiconductor substrate suitable for the column circuit 14, the columnscanning circuit 15 and the like which carry out a high-speed digitaloperation and a manufacturing method thereof.

As a result, the performances of the analog and digital circuits can bebalanced at a high level, as compared with the case in which theplurality of circuit blocks of FIG. 1 are formed in one semiconductorsubstrate.

Particularly, in the case of a CMOS image sensor, an increase in costdue to an increase in the number of processes and a deterioration insensor characteristics due to a difference in optimum processes aregenerated due to a difference in process requirements for the case inwhich the analog pixel array portion 13 and the logic circuit are formedin the same semiconductor substrate.

However, in a so-called three-dimensional LSI structure having astructure in which chips are stacked, one LSI can be configured bystacking chips of different processes, and thus the above-describedproblems can be solved.

In addition, in the three-dimensional LSI structure, a number ofconnections can be made between the chips with a pitch which is narrowerthan that between the chip and the package and can be made by chipinternal wiring, not by a so-called interface circuit.

For these reasons, the three-dimensional LSI structure can be said as astructure effective for a high-speed and highly-functional CMOS imagesensor.

However, in the stacking of the chips, which part of the circuit isdivided and the inter-chip connection is made at is important in itseffect on the circuit.

An interface circuit which is necessary for connection by a bonding wirebetween the chips has an electrostatic breakdown preventing function andalso contributes to the suppression of a breakdown due to an electricalcharge caused by a plasma device or the like in the manufacturingprocess.

Since the stacked chip configuration employs the plurality of micropads52 and 54, the same level of electrostatic care as in a traditionalinterface is not carried out. However, it is necessary to prevent theelectrostatic breakdown in the inter-wafer connection process.

When such an electrostatic protection element is provided for eachconnection terminal, the area of the connection part increases and theload capacity of the circuit of the connection part increases.

Accordingly, as described above, for example, when the pixel arrayportion 13 is formed in the sensor chip 6, the inter-chip connection ismade for each readout circuit which is disposed for each column in theimage sensor, and thus the number of connections increases.

As a result, the occupancy area of the connection terminal groupincreases and this puts pressure on the circuit area.

In addition, an increase in the capacity load due to the connection ofthe protection circuit leads to an increase in the amount of charge anddischarge when the signal is transmitted, and thus power consumptionincreases.

At the same time, in a so-called CMOS logic circuit, when the waveformof an input signal becomes extremely dull, a through current isgenerated from the power supply to the GND and power consumption furtherincreases.

In addition, in order to suppress the increase in power consumption,several stages of buffer circuits are used to increase the size of thetransistor on the transmission side to thereby increase the currentsupply capability, and thus the area increases.

A specific description thereof will be given.

As described above, for example, when the pixel array portion 13 of FIG.2 is formed in the sensor chip 6 and the column circuit 14 is formed inthe signal processing chip 7, the input terminal of the comparator 41 ofthe column circuit 14 of FIG. 2 is connected to the micropad 54. Themicropad 54 is connected to the column output signal line 21 via themicrobump 55 and the micropad 52.

In the manufacturing process, when electrostatic noise is input to theinput terminal of the comparator 41, the comparator 41 may be damaged.

Therefore, in the signal processing chip 7, an input protection circuitis added between the input terminal of the comparator 41 and themicropad 54 connected to the input terminal.

In addition, it is necessary to add a driving circuit to the analogcircuit which drives the digital circuit formed in another chip 7 andincrease the driving capability. The driving circuit at the output stagewhich is formed for the above-described desire has a large area.

In the pixel array portion 13, since the amplification transistor 34 ofthe pixel circuit 19 is formed as a source follower circuit using thecurrent supply 37 as a load, this does not become a problem.

For these reasons, in the case of the distribution into the sensor chip6 and the signal processing chip 7 for each circuit block so as to formthe pixel array portion 13 in the sensor chip 6 and form the columncircuit 14 in the signal processing chip 7, the total area of thesemiconductor substrate increases due to the generation of theadditional circuit.

FIG. 4 is an explanatory diagram of a method of distributing the pixelarray portion 13 and the column circuit 14 into the sensor chip 6 andthe signal processing chip 7 of FIGS. 3A and 3B.

FIG. 5 is an explanatory diagram of a method of distributing the pixelarray portion 13 for one column and the column circuit 14 into thesensor chip 6 and the signal processing chip 7 of FIGS. 3A and 3B.

In this embodiment, distribution is not carried out for each circuitblock, but a part of the analog circuit is distributed into the sensorchip 6, and the remaining part of the analog circuit and the digitalcircuit are distributed into the signal processing chip 7.

Specifically, as shown in FIGS. 4 and 5, in the sensor chip 6, theplurality of pixel circuits 19 of the pixel array portion 13 which are apart of the analog circuit and the row scanning circuit 12 of thedigital circuit are formed.

In addition, the plurality of current supplies 37 of the pixel arrayportion 13 which are the remaining part of the analog circuit, and thecolumn circuit 14, the column scanning circuit 15, the horizontalscanning output signal line 16, the timing control circuit 11, thearithmetic circuit 17, and the output circuit 18 as the digital circuitare formed in the signal processing chip 7.

The row canning circuit 12 is a digital circuit. However, here, the rowcanning circuit 12 is formed in the sensor chip 6.

This is because the row scanning circuit 12 is a circuit which operatesrelatively slowly to switch the signal for each horizontal scanningperiod, does not operate rapidly as the column circuit 14 and the like,and does not have high digital characteristics.

In addition, the row scanning circuit 12 and the pixel array portion 13are connected to each other by the many row selection signal lines 20.

Accordingly, when the row scanning circuit 12 is formed in the signalprocessing chip 7, it is necessary to connect these many row selectionsignal lines 20 by microbumps 55 and thus a lot of microbumps 55 areused.

FIGS. 6A and 6B are explanatory diagrams of the current supply 37 of thepixel array portion 13 formed in the signal processing chip 7 of FIGS.3A and 3B.

FIG. 6A is a circuit diagram of the current supply 37.

FIG. 6B is a schematic cross-sectional diagram of the secondsemiconductor substrate 53 of the signal processing chip 7.

As described above, the current supply 37 of the pixel array portion 13is a part of the pixel array portion 13 as the analog circuit, but isallowed to be formed in the signal processing chip 7.

In addition, the current supply 37 of the pixel array portion 13 has acurrent supply transistor 38 connected to the column output signal line21.

The current supply transistor 38 is, for example, an MOS transistor.

In the current supply transistor 38, the source is connected to themicropad 54 of the signal processing chip 7, the drain is connected tothe ground, and the gate is connected to a bias supply (not shown).

Therefore, the current supply transistor 38 functions as a currentsupply 37 of the current according to the bias voltage of the biassupply.

As shown in FIG. 6B, this current supply transistor 38 has a sourcediffusion layer 61 which is formed in the second semiconductor substrate53, a drain diffusion layer 62, and a gate wiring portion 63 which isstacked via the second semiconductor substrate 53 and an oxide film(thin insulating film).

The source diffusion layer 61 is connected to the micropad 54 of thesignal processing chip 7 by wiring.

The drain diffusion layer 62 is connected to the ground of the signalprocessing chip 7 by wiring.

Since the source node of the current supply transistor 38 is connectedto the micropad 54 of the signal processing chip 7 as in FIG. 6B, themicropad 54 is connected to the diffusion layer of the current supplytransistor 38.

Therefore, the diffusion layers 61 and 62 of the current supplytransistor 38 function as a protection circuit to allow theelectrostatic noise input from the micropad 54 of the signal processingchip 7 to escape to the ground.

That is, since the electrostatic noise input from the micropad 54 of thesignal processing chip 7 escapes to the ground from the current supply37 in FIG. 4, it becomes difficult for the electrostatic noise to beinput to the input terminal of the comparator 41 of the column circuit14.

Comparative Example: Comparative Example of Method of DistributingCircuits into Sensor Chip 6 and Signal Processing Chip 7

FIG. 7 is an explanatory diagram of the chip distribution in thesolid-state imaging apparatus 1 of a comparative example.

In the comparative example of FIG. 7, an AD converter 71 which isconnected to the current supply 37 and the column output signal line 21is provided in the sensor chip 6, and a digital output signal of this ADconverter 71 is connected to the micropad 52.

In addition, in the comparative example of FIG. 7, a CMOS buffer 72 anda protection diode 73 are connected to the micropad 54 of the signalprocessing chip 7.

The CMOS buffer 72 is connected to, for example, one input terminal ofthe comparator 41 of the column circuit 14.

In this comparative example of FIG. 7, all of the circuits of the pixelarray portion 13 as the analog circuit are provided in the sensor chip6, and all of portions of the column circuit 14 as the digital circuitare provided in the signal processing chip 7.

In addition, due to the protection diode 73, the electrostatic noise inthe manufacturing process which is input from the micropad 54 of thesignal processing chip 7 escapes to the ground.

Due to the protection diode 73, the input terminal of the CMOS buffer 72is protected.

However, in the circuit of the comparative example, the AD converter 71is added to the sensor chip 6, and the CMOS buffer 72 and the protectiondiode 73 are added to the signal processing chip 7.

As a result, in the circuit of the comparative example, the total areaof the semiconductor substrate significantly increases since the circuitblock of the solid-state imaging apparatus 1 is divided into two chips.

[Optical Layout]

FIG. 8 is an explanatory diagram of the optical structures of the sensorchip 6 and the signal processing chip 7 of FIG. 2.

As shown in FIG. 8, the first semiconductor substrate 51 of the sensorchip 6 is disposed to overlap on the second semiconductor substrate 53of the signal processing chip 7.

The upper surface of the first semiconductor substrate 51 has theplurality of pixel circuits 19 formed therein, and the column outputsignal line 21 and the like are disposed in the upper surface of thefirst semiconductor substrate 51.

In addition, the upper surface of the second semiconductor substrate 53has the digital circuit such as the column circuit 14 and the like, thecurrent supply 37, and the like formed therein.

The column output signal line 21 formed in the upper surface of thefirst semiconductor substrate 51 is connected to the micropad 52 of theback surface of the first semiconductor substrate 51, and is connectedto the micropad 54 of the upper surface of the second semiconductorsubstrate 53 due to the microbump 55.

When an MOS transistor is used as the current supply 37, a high voltageis applied between the gate and the source of this MOS transistor.

A power-supply voltage VDD which is generated by the first semiconductorsubstrate 51 is applied. When the voltage between the gate and thesource increases, the MOS transistor may emit light caused by hotcarrier due to the current flowing in a PN junction surface such as thesubstrate.

When the current supply transistor 38 formed in the second semiconductorsubstrate 53 emits light, the light may enter the photodiode 31 of thefirst semiconductor substrate 51.

Accordingly, in the first embodiment, as shown in FIG. 8, the columncircuit 14 and the like are formed in a position which overlaps with theplurality of pixel circuits 19 in the second semiconductor substrate 53,and the current supply 37 is formed in a position which does not overlapwith the plurality of pixel circuits 19.

In this manner, in the first embodiment, the current supply 37 formed inthe second semiconductor substrate 53 is formed in a position which doesnot overlap with the pixel array portion 13 of the first semiconductorsubstrate 51.

Therefore, even when the current supply transistor 38 emits light, thelight does not enter the photodiode 31 of the first semiconductorsubstrate 51.

As described above, in the first embodiment, among the plurality ofpixel circuits 19 and the current supply 37 constituting the analogcircuit, the current supply 37 is formed using the transistor in thesignal processing chip 7.

In this manner, the current supply transistor 38 can also be allowed tofunction as the input protection circuit of the digital circuit.

As a result, it is not necessary to newly add the input protectioncircuit of the digital circuit, and thus an increase in the load and anincrease in the area can be suppressed.

In addition, in the first embodiment, the solid-state imaging apparatus1 is divided into two chips in the column output signal line 21 to whicha source follower circuit is connected.

A CMOS image sensor has a source follower circuit which shares thecurrent supply transistor 38 with the plurality of pixel circuits 19.Originally, between the amplification transistor 34 as a driver of thissource follower circuit and the current supply transistor 38, highwiring resistance and large diffusion layer capacity and wiring capacityare present. Even when the resistance and the capacity caused by theinter-chip connection are added to this part, the analog characteristicsare not heavily affected.

In this manner, in the first embodiment, the effect of the resistanceand the capacity of the connection portion in the inter-chip connectioncan be reduced, and the risk of destruction of the transistor due to adamage during the manufacturing process can be reduced.

2. Second Embodiment

The circuit blocks of a solid-state imaging apparatus 1, the method ofdistributing the circuit blocks into a sensor chip 6 and a signalprocessing chip 7, and the configuration of a current supply transistor38 in a second embodiment are the same as in the first embodiment.

That is, a plurality of pixel circuits 19 of a pixel array portion 13are formed in the sensor chip 6, and the current supply transistor 38 isformed in the signal processing chip 7 as in the case of a columncircuit 14 and the like.

Accordingly, in the second embodiment, the same symbols as in the firstembodiment will be used for the portions in the solid-state imagingapparatus 1 and descriptions thereof will be omitted.

[Optical Layout]

FIG. 9 is an explanatory diagram of the optical structures of the sensorchip 6 and the signal processing chip 7 in the second embodiment of thepresent disclosure.

In the second embodiment, as shown in FIG. 9, a current supply 37 isformed in addition to the column circuit 14 and the like in a positionwhich overlaps with the plurality of pixel circuits 19 in a secondsemiconductor substrate 53.

In addition, in the second embodiment, a light-shielding metal film 81is disposed between the first and second semiconductor substrates 51 and53. The light-shielding metal film 81 may be formed of, for example,aluminum, copper, or the like.

In this manner, for example, even when the current supply transistor 38emits light, the light does not enter a photodiode 31 of the firstsemiconductor substrate 51.

In the second embodiment, the light-shielding metal film 81 is disposedbetween the first and second semiconductor substrates 51 and 53.

In addition, the light-shielding metal film 81 may also be disposedbetween the current supply transistor 38 and the plurality of pixelcircuits 19 by forming the wiring layer at the top of the secondsemiconductor substrate 53 in a solid pattern.

Moreover, the light-shielding metal film 81 may also be disposed betweenthe current supply transistor 38 and the plurality of pixel circuits 19by forming in a metal solid pattern on the back surface of the firstsemiconductor substrate 51.

For example, in the case of a so-called back surface irradiation type inwhich the back surface of the first semiconductor substrate 51 has awiring layer formed thereon, a solid pattern may be formed in theuppermost layer of the wiring layer on the back surface.

In addition, in place of the light-shielding metal film 81 and the metalsolid pattern, a light-absorbing film or a light-scattering film may beprovided between the first and second semiconductor substrates 51 and53. For example, the light can be scattered or absorbed by applying asilicon-based adhesive between the first and second semiconductorsubstrates 51 and 53.

3. Third Embodiment

The circuit blocks of a solid-state imaging apparatus 1 and theconfiguration of a current supply transistor 38 in a third embodimentare the same as in the first embodiment.

That is, a plurality of pixel circuits 19 of a pixel array portion 13are formed in a sensor chip 6, and the current supply transistor 38 isformed in a signal processing chip 7 as in the case of a column circuit14 and the like.

Accordingly, in the third embodiment, the same symbols as in the firstembodiment will be used for the portions in the solid-state imagingapparatus 1 and descriptions thereof will be omitted.

[Method of Distributing Circuits into Sensor Chip 6 and SignalProcessing Chip 7]

FIG. 10 is an explanatory diagram of a method of distributing the pixelarray portion 13 for one column and the column circuit 14 into thesensor chip 6 and the signal processing chip 7 of the third embodimentof the present disclosure.

In the solid-state imaging apparatus 1 of FIG. 10, a voltage supplycircuit 91 which supplies an amplifier power-supply voltage VDC to thepixel array portion 13 of the sensor chip 6 is formed in the signalprocessing chip 7.

The voltage supply circuit 91 is connected to micropads 54 of a secondsemiconductor substrate 53 of the signal processing chip 7, and isconnected to micropads 52 of a first semiconductor substrate 51 bymicrobumps 55. The micropad 52 is connected to the drain of anamplification transistor 34 of each of the plurality of pixel circuits19.

As in the first embodiment, the drain of a reset transistor 36 of eachof the plurality of pixel circuits 19 is supplied with the power-supplyvoltage VDD from the circuit (not shown) of a current supply 37 formedin the sensor chip 6.

The power-supply voltage VDC which is supplied to the drain of theamplification transistor 34 by the voltage supply circuit 91 of FIG. 10is lower than the power-supply voltage VDD.

Accordingly, in the signal processing chip 7, it is not necessary to usea high breakdown voltage element or the like to deal with the highpower-supply voltage of the sensor chip 6. In addition, 1/f noise can bereduced by using a low breakdown voltage element in the signalprocessing chip 7.

4. Fourth Embodiment

A solid-state imaging apparatus 1 of a fourth embodiment is a CCDsensor-type apparatus different from the CMOS sensor-type apparatus ofthe first to third embodiments.

[Configuration of CCD Sensor-Type Solid-State Imaging Apparatus 1 andChip Distribution Method]

FIG. 11 is an explanatory diagram of the configuration of a solid-stateimaging apparatus 1 of the fourth embodiment of the present disclosureand a chip distribution method.

The solid-state imaging apparatus 1 of FIG. 11 has a plurality ofphotodiodes 31, a plurality of vertical transmission portions 101, aplurality of reset transistors 102, a plurality of amplificationtransistors 103, a plurality of column output signal lines 21, aplurality of current supplies 37, a plurality of amplifiers 104, and ahorizontal transmission signal line 105. These circuits are analogcircuits which deal with an analog signal.

In addition, the solid-state imaging apparatus 1 of FIG. 11 has an ADconverter 106 and an output buffer 107. These circuits are digitalcircuits which convert and process the analog signal into a digitalvalue.

The plurality of photodiodes 31 are two-dimensionally arranged in afirst semiconductor substrate 51 of a sensor chip 6.

The vertical transmission portions 101 are formed in the firstsemiconductor substrate 51 so as to be adjacent to the plurality ofphotodiodes 31 of each column.

The reset transistors 102 are, for example, MOS transistors. The resettransistor 102 is connected to an end part in the charge transmissiondirection of each vertical transmission portion 101 in the firstsemiconductor substrate 51. In the reset transistor 102, the source isconnected to the vertical transmission portion 101 and the drain isconnected to a power-supply voltage.

The amplification transistors 103 are, for example, MOS transistors. Theamplification transistor 103 is connected to an end part in the chargetransmission direction of each vertical transmission portion 101 in thefirst semiconductor substrate 51. In the amplification transistor 103,the source is connected to a power-supply voltage, the drain isconnected to the column output signal line 21, and the gate is connectedto the vertical transmission portion 101.

FIG. 12 is an explanatory diagram of an example of the layout at the endpart in the charge transmission direction of the vertical transmissionportion 101.

In FIG. 12, the vertical transmission portion 101 is shown to extend inthe vertical direction.

A gate electrode 111 of a reset transistor 36 is formed to intersectwith the lower end edge of the vertical transmission portion 101.

In addition, a part between the final stage of the vertical transmissionportion 101 and the gate electrode 111 of the reset transistor 36 isconnected to the gate of an amplification transistor 34.

Due to such a structure, the amplification transistor 34 can amplify andoutput the charge transmitted from the vertical transmission portion101.

In addition, the vertical transmission portion 101 can be reset to thepower-supply voltage by the reset transistor 36.

The column output signal line 21 of FIG. 11 includes a micropad 52 ofthe first semiconductor substrate 51 and a micropad 54 of a secondsemiconductor substrate 53 of a signal processing chip 7, and isconnected by a microbump 55.

The current supply 37 has a current supply transistor 38 formed in thesecond semiconductor substrate 53.

The current supply transistor 38 is, for example, an MOS transistor.

In the current supply transistor 38, the source is connected to thecolumn output signal line 21 of the signal processing chip 7, the drainis connected to the ground, and the gate is connected to a bias supply(not shown).

In this manner, the amplification transistor 34 constitutes a sourcefollower circuit using the current supply transistor 38 as a load.

The amplifier 104 is connected to the column output signal line 21 andthe horizontal transmission signal line 105 in the second semiconductorsubstrate 53. The voltage input from the column output signal line 21 isamplified and output to the horizontal transmission signal line 105.

The AD converter 106 is connected to the horizontal transmission signalline 105 in the second semiconductor substrate 53. The AD converter 106converts the voltage input from the horizontal transmission signal line105 into a digital value.

The output buffer 107 is connected to the AD converter 106 in the secondsemiconductor substrate 53. The output buffer 107 outputs an outputsignal of the AD converter 106 to the outside of the solid-state imagingapparatus 1.

In addition, in the solid-state imaging apparatus 1 of FIG. 11, thereset transistor 102 resets the plurality of photodiodes 31 and thevertical transmission portion 101.

After the reset, the plurality of photodiodes 31 subject incident lightto photoelectric conversion.

The vertical transmission portion 101 transmits a charge generated bythe photoelectric conversion in the plurality of photodiodes 31 of eachcolumn.

The amplification transistor 103 outputs to the column output signalline 21 a pixel signal of a voltage according to the charge generated byeach photodiode 31, which is transmitted by the vertical transmissionportion 101.

The amplifier 104 amplifies and outputs the pixel signal to thehorizontal transmission signal line 105.

The AD converter 106 converts the pixel signal into a digital value.

The output buffer 107 outputs the pixel signal converted into thedigital value.

Also in the case of this fourth embodiment, the current supply 37 of theanalog circuit is provided in the signal processing chip 7. That is, inthis embodiment, distribution is not carried out for each circuit block,but a part of the analog circuit is distributed into the sensor chip 6,and the remaining part of the analog circuit and the digital circuit aredistributed into the signal processing chip 7.

In the fourth embodiment, the current supply 37 of the analog circuit isprovided in the signal processing chip 7 as in the first embodiment.

In addition, as in the third embodiment, a voltage supply circuit 91which is connected to the drain of the amplification transistor 34 ofthe sensor chip 6 may be provided in the signal processing chip 7.

In the CCD sensor-type solid-state imaging apparatus 1 of the fourthembodiment, the circuits from the reset transistor 102 to the horizontaltransmission signal line 105 are connected between the plurality ofvertical transmission portion 101 and the AD converter 106.

In addition, for example, as in a general CCD sensor-type solid-stateimaging apparatus 1, the present disclosure can be applied even when ahorizontal transmission portion is provided between the plurality ofvertical transmission portions 101 and the AD converter 106.

In this case, for example, the plurality of vertical transmissionportions 101 may be connected to the horizontal transmission portion bywiring, and in the wiring, the first and second semiconductor substrates51 and 53 may be connected to each other.

5. Fifth Embodiment

FIG. 13 is a block diagram of an imaging apparatus 2 according to afifth embodiment of the present disclosure.

The imaging apparatus 2 of FIG. 13 has an optical system 121, asolid-state imaging apparatus 1, and a signal processing circuit 122.

The imaging apparatus 2 of FIG. 13 is, for example, a video camera, adigital still camera, a camera for electronic endoscope, or the like.

The optical system 121 makes the solid-state imaging apparatus 1 formthe image of image light (incident light) from a subject.

In this manner, in a photodiode 31 of the solid-state imaging apparatus1, the incident light is converted into a signal charge according to theintensity of the incident light and a charge is generated in thephotodiode 31.

The solid-state imaging apparatus 1 is, for example, the solid stateimaging apparatus 1 according to the first embodiment. The solid-stateimaging apparatus 1 may also be the solid-state imaging apparatus 1according to the second to fourth embodiment.

The solid-state imaging apparatus 1 outputs an imaging signal based onthe charges which are generated in the plurality of photodiodes 31. Theimaging signal includes digital values of the pixels corresponding tothe charges which are generated in the plurality of photodiodes 31.

The signal processing circuit 122 is connected to the solid-stateimaging apparatus 1.

The signal processing circuit 122 subjects the imaging signal outputfrom the solid-state imaging apparatus 1 to various signal processes,and generates and outputs a video signal.

The above-described embodiments are examples of the preferredembodiments of the present disclosure. However, the present disclosureis not limited thereto. Various deformations or modifications may occurwithout departing from the gist of the present disclosure.

For example, in the above-described embodiments, each column outputsignal line 21 to which the plurality of pixel circuits 19 are connectedis connected to the comparator 41 of the column circuit 14.

The signal of a pixel is digitalized by an ADC including this comparator41 and the counter 42, and is connected to the horizontal scanningsignal line 16 via the memory 43. An analog amplifier which amplifiesthe voltage of a pixel signal may be disposed in place of this ADC andan analog signal may be transmitted via the horizontal scanning signalline 16 to be subjected to digital conversion at the end part thereof.

The imaging apparatus 2 of the above-described fifth embodiment is usedas a video camera, a digital still camera, a monitoring camera, a camerafor an electronic endoscope, or the like.

In addition, for example, the solid-state imaging apparatus 1 may beused in electronic devices such as a mobile phone, a Personal DataAssistance (PDA), an electronic book, a computer and a portable player.

The above-described embodiments show an example in which the analog anddigital circuits of the solid-state imaging apparatus 1 are divided intothe two semiconductor substrates 51 and 53.

In addition, as a semiconductor integrated circuit having analog anddigital circuits mounted thereon, there are an integrated circuit forvoice which digitalizes and processes a voice and various control sensorintegrated circuits which detect and process physical quantities such astemperature, concentration, humidity, and weight. In these integratedcircuits, for example, a signal charge is accumulated in a capacitor andsubjected to charge-voltage conversion to be output.

The present disclosure can also be applied when analog and digitalcircuits are divided into two semiconductor substrates in thesesemiconductor integrated circuits.

In addition, these semiconductor integrated circuits can be used invarious electronic devices such as an imaging apparatus, a recordingdevice, a measuring device and a tester device.

In the above-described embodiments, the micropad 52 of the sensor chip 6and the micropad 54 of the signal processing chip 7 are connected toeach other by the microbump 55.

In addition, for example, the sensor chip 6 and the signal processingchip 7 may be connected to each other by a bonding wire or the like. Thesensor chip 6 and the signal processing chip 7 may be sealed in a statein which each other's micropads 52 and 54 are brought into contact witheach other.

In the above-described embodiments, the current supply transistor 38 foreach of the plurality of current supplies 37 provided for each column inthe pixel array portion 13 is provided in the signal processing chip 7.

In addition, for example, when the analog circuit such as the pixelarray portion 13 has a capacitor which removes the DC component of asignal, a diffusion layer in which this capacitor is formed in thesignal processing chip 7 may be used.

FIGS. 14A and 14B are explanatory diagrams of a DC cutting circuit whichremoves the DC component of an analog signal.

The DC cutting circuit of FIGS. 14A and 14B has a capacitor 131 whichremoves the DC component of an analog signal.

In addition, FIGS. 14A and 14B also show a transistor 132 which has agate to which a signal, the DC component of which is removed by thecapacitor 131, is input.

As shown in FIGS. 14A and 14B, this capacitor 131 can be formed using adiffusion layer 142 of a semiconductor substrate 141.

The capacitor 131 of FIGS. 14A and 14B has the diffusion layer 142 whichis formed in the semiconductor substrate 141, a first wiring 143 whichis connected to one end of the diffusion layer 142, and a second wiring144 which overlaps with the diffusion layer 142 via an insulating film.

In this manner, when the capacitor 131 which uses the diffusion layer142 formed in the semiconductor substrate 141 is formed in the signalprocessing chip, it is not necessary to provide an input protectioncircuit in the transistor 132 of FIGS. 14A and 14B to which the analogsignal is input or the digital circuit.

The present disclosure contains subject matter related to that disclosedin Japanese Priority Patent Application JP 2010-197730 filed in theJapan Patent Office on Sep. 3, 2010, the entire contents of which arehereby incorporated by reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

1-15. (canceled)
 16. An imaging device, comprising: first and secondsemiconductor substrates; a photoelectric conversion element outputtinga pixel signal based on an incident light, wherein the photoelectricconversion element is disposed in the first semiconductor substrate, ananalog circuit that generates an analog signal based on the pixelsignal, wherein a first part of the analog circuit is disposed on thefirst semiconductor substrate, the first part comprising a transfertransistor, a reset transistor, a select transistor, and anamplification transistor, and wherein a second part of the analogcircuit is disposed on the second semiconductor substrate, the secondpart comprising a current supply transistor for current supply; adigital circuit on the second semiconductor substrate, wherein thedigital circuit converts the analog signal into a digital signal; aconnection connecting the first part of the analog circuit to the secondpart of the analog circuit; and a light-shielding metal disposed betweenthe current supply transistor and the photoelectric conversion element.17. The imaging device according to claim 16, further comprising: apixel array comprising a plurality of photoelectric conversion elementsthat includes the photoelectric conversion element.
 18. The imagingdevice according to claim 16, wherein the light-shielding metal is in awiring layer.
 19. The imaging device according to claim 16, wherein thefirst semiconductor substrate comprises a plurality of pixel circuits,and wherein the light-shielding metal is disposed between the currentsupply transistor for current supply and the plurality of pixel circuitsin the first semiconductor substrate by forming a solid pattern in awiring layer on the first semiconductor substrate.
 20. The imagingdevice according to claim 16, further comprising: a row scanning circuiton the first semiconductor substrate.
 21. The imaging device accordingto claim 16, further comprising: at least one of a timing controlcircuit and a column scanning circuit on the second semiconductorsubstrate.
 22. The imaging device according to claim 20, furthercomprising: at least one of a timing control circuit and a columnscanning circuit on the second semiconductor substrate, wherein the rowscanning circuit overlays the at least one of the timing control circuitand the column scanning circuit.
 23. The imaging device according toclaim 16, wherein: the first semiconductor substrate has a firstterminal that is connected to the first part of the analog circuit andthe connection, and the second semiconductor substrate has a secondterminal that is connected to the connection.
 24. The imaging deviceaccording to claim 16, wherein: the first semiconductor substrate has anoutput terminal that is connected to the first part of the analogcircuit and the connection, and the second semiconductor substrate hasan input terminal that is connected to the connection, and the secondsemiconductor substrate has a diffusion layer that is included in thecurrent supply transistor and is connected to the input terminal. 25.The imaging device according to claim 16, wherein the firstsemiconductor substrate comprises a plurality of pixel circuits, andfurther comprising: an output signal line which is connected to theplurality of pixel circuits and transmits the pixel signal; wherein thecurrent supply transistor is connected to the output signal line;wherein the plurality of pixel circuits includes the first part of theanalog circuit in the first semiconductor substrate; and wherein theoutput signal line includes the connection.
 26. The imaging deviceaccording to claim 16, wherein the second semiconductor substrate has apower supply portion that supplies a power supply voltage to a drain ofthe amplification transistor.
 27. The imaging device according to claim16, wherein the second part of the analog circuit disposed on the secondsemiconductor substrate includes a portion of a column output signalline and a power supply connected to the portion of the column outputsignal line.
 28. The imaging device according to claim 20, wherein therow scanning circuit selects a plurality of row selection signal linesbased on a vertical synchronization signal input from the timing controlcircuit.
 29. The imaging device according to claim 16, wherein thelight-shielding metal is adjacent to the connection.
 30. The imagingdevice according to claim 18, wherein the light-shielding metal isadjacent to the connection.
 31. The imaging device according to claim19, wherein the light-shielding metal is adjacent to the connection. 32.An imaging apparatus, comprising: an optical system that collects light;and an imaging device comprising a plurality of photoelectric conversionelements that subject the light collected by the optical system tophotoelectric conversion to output pixel signals based on the light,wherein the imaging device comprises: first and second semiconductorsubstrates, wherein the photoelectric conversion elements are disposedin the first semiconductor substrate; an analog circuit that generatesanalog signals based on the pixel signals, wherein a first part of theanalog circuit is disposed on the first semiconductor substrate, thefirst part comprising a transfer transistor, a reset transistor, aselect transistor, and an amplification transistor, and wherein a secondpart of the analog circuit is disposed on the second semiconductorsubstrate, the second part comprising a current supply transistor forcurrent supply; a digital circuit on the second semiconductor substrate,wherein the digital circuit converts the analog signals into digitalsignals; a connection connecting the first part of the analog circuit tothe second part of the analog circuit; and a light-shielding metaldisposed between the current supply transistor and the photoelectricconversion elements.
 33. The imaging apparatus according to claim 32,wherein the light-shielding metal is in a wiring layer.
 34. The imagingapparatus according to claim 32, wherein the first semiconductorsubstrate comprises a plurality of pixel circuits, and wherein thelight-shielding metal is disposed between the current supply transistorfor current supply and the plurality of pixel circuits in the firstsemiconductor substrate by forming a solid pattern in a wiring layer onthe first semiconductor substrate.
 35. An electronic device, comprising:an imaging device, comprising: first and second semiconductorsubstrates; a photoelectric conversion element outputting a pixel signalbased on an incident light, wherein the photoelectric conversion elementis disposed in the first semiconductor substrate, an analog circuit thatgenerates an analog signal based on the pixel signal, wherein a firstpart of the analog circuit is disposed on the first semiconductorsubstrate, the first part comprising a transfer transistor, a resettransistor, a select transistor, and an amplification transistor, andwherein a second part of the analog circuit is disposed on the secondsemiconductor substrate, the second part comprising a current supplytransistor for current supply; a digital circuit on the secondsemiconductor substrate, wherein the digital circuit converts the analogsignal into a digital signal; a connection connecting the first part ofthe analog circuit to the second part of the analog circuit; and alight-shielding metal disposed between the current supply transistor andthe photoelectric conversion element.